257 citations · 752 across the 7 of their papers we have counts for
6 papers · 1 filter
Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers
Yumeng Yang, Yanjun Xu, Kui Yao +1
We investigated spin Hall magnetoresistance in FeMn/Pt bilayers, which was found to be one order of magnitude larger than that of heavy metal and insulating ferromagnet or antiferr…
Field-like spin orbit torque in ultra-thin polycrystalline FeMn films
Yumeng Yang, Yanjun Xu, Xiaoshan Zhang +6
Field-like spin orbit torque in FeMn/Pt bilayers with ultra-thin polycrystalline FeMn has been characterized through planar Hall effect measurements. A large effective field is obt…
Investigation of Magnetic Proximity Effect inTa/YIG Bilayer Hall Bar Structure
Yumeng Yang, Baolei Wu, Kui Yao +3
In this work, the investigation of magnetic proximity effect was extended to Ta which has been reported to have a negative spin Hall angle. Magnetoresistance and Hall measurements…
Graphene-Ferroelectric Hybrid Structure for Flexible Transparent Electrodes
Guang-Xin Ni, Yi Zheng, Sukang Bae +6
Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode a…
Graphene field effect transistors with ferroelectric gating
Yi Zheng, Guang-Xin Ni, Chee-Tat Toh +3
Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non…
Gate-controlled non-volatile graphene-ferroelectric memory
Yi Zheng, Guang-Xin Ni, Chee-Tat Toh +4
In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the…