464 citations · 1.1k across the 8 of their papers we have counts for
8 papers
Dynamics of amorphous membranes in the two-dimensional limit
Liga Jasulaneca, Alberto Martín-Pérez, Hongji Zhang +7
Atomically thin mechanical resonators have been realized predominantly in crystalline two-dimensional (2D) materials, such as graphene, where long-range crystalline order sets thei…
Atomically Thin Amorphous Carbon with an Ultralow Dielectric Constant
Chee-Tat Toh, Artem K. Grebenko, Ugur Karadeniz +17
Two-dimensional (2D) materials exhibit excellent properties at monolayer thickness and are viable replacements for various microelectronic components as scaling gradually approache…
Quantum Criticality in Monolayer Amorphous Carbon
Rejaul SK, Hanning Zhang, Artem K Grebenko +15
Amorphous solids represent the extreme limit of broken translational symmetry, in which the absence of long-range order removes well-defined crystal momenta and invalidates the Blo…
Synthesis and properties of free-standing monolayer amorphous carbon
Chee-Tat Toh, Hongji Zhang, Junhao Lin +12
Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zacharias…
Tuning Optical Conductivity of Large-Scale CVD Graphene by Strain Engineering
Guang-Xin Ni, Hong-Zhi Yang, Wei Ji +5
Strain engineering has been recently recognized as an effective way to tailor the electrical properties of graphene. In the optical domain, effects such as strain-induced anisotrop…
Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics
Yi Zheng, Guang-Xin Ni, Sukang Bae +9
Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphen…
Graphene field effect transistors with ferroelectric gating
Yi Zheng, Guang-Xin Ni, Chee-Tat Toh +3
Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non…
Gate-controlled non-volatile graphene-ferroelectric memory
Yi Zheng, Guang-Xin Ni, Chee-Tat Toh +4
In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the…