2 papers
cond-mat.mtrl-sci2026
Unlocking extreme doping and strain in epitaxial monocrystalline silicon
Léonard Desvignes, Dominique Débarre, Ludovic Largeau +8
Hyperdoping, overcoming the solubility limit of dopants in a crystalline semiconductor, is a fertile method for the enhancement of the electrical, structural and optical devices' p…
cond-mat.mtrl-sci2022
Evidence of boron pairs in highly boron laser doped silicon
Léonard Desvignes, Francesca Chiodi, Géraldine Hallais +5
Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was ma…