2 papers
cond-mat.mtrl-sci2026
Uncovering the properties of homo-epitaxial GaN devices through cross-sectional infrared nanoscopy
Hossein Zandipour, Felix Kaps, Robin Buschbeck +19
Validating material performance in electrical devices is crucial to product development. For Gallium Nitride (GaN) devices, evaluating material factors such as defects, dopant conc…
cond-mat.mtrl-sci2024
Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers
Henry T. Aller, Thomas W. Pfeifer, Abdullah Mamun +12
This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor dep…