5 papers · 1 filter
Layer-polarized Transport via Gate-defined 1D and 0D PN Junctions in Double Bilayer Graphene
Wei Ren, Xi Zhang, Shiyu Guo +6
We fabricate twisted double bilayer graphene devices with zero twist angle and a set of local top and bottom gates aligned perpendicularly to each other. A 1D PN junction can be el…
Ferroelectric Quantum Point Contact in Twisted Transition Metal Dichalcogenides
Wei Ren, Shiyu Guo, Daochen Long +8
In twisted transition metal dichalcogenides (tTMDs), atomic reconstruction gives rise to moiré domains with alternating ferroelectric polarization, whose domain size and overall el…
Easy-to-configure zero-dimensional valley-chiral modes in a graphene point junction
Konstantin Davydov, Xi Zhang, Wei Ren +6
The valley degree of freedom in 2D materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphen…
Electron Collimation in Twisted Bilayer Graphene via Gate-defined Moiré Barriers
Wei Ren, Xi Zhang, Ziyan Zhu +6
Electron collimation via a graphene pn-junction allows electrostatic control of ballistic electron trajectories akin to that of an optical circuit. Similar manipulation of novel co…
Tunable Inter-Moiré Physics in Consecutively-Twisted Trilayer Graphene
Wei Ren, Konstantin Davydov, Ziyan Zhu +6
We fabricate a twisted trilayer graphene device with consecutive twist angles of 1.33 and 1.64 degrees, in which we electrostatically tune the electronic states from each of the tw…