50 citations · 50 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2026
Imaging the high-frequency charging dynamics of a single impurity in a semiconductor on the atomic scale
Maialen Ortego Larrazabal, Jiasen Niu, Stephen R. McMillan +4
As electronic devices approach the atomic limit, the charge dynamics of individual dopant atoms increasingly constrain performance, stability, and coherence. In scanning tunnelling…
cond-mat.mes-hall2015★ 50 cited
Size dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charges on spectral diffusion
N. Ha, T. Mano, Y. L. Chou +8
Making use of droplet epitaxy, we systematically controlled the height of self-assembled GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra of sin…
cond-mat.mes-hall2012
Valence state manipulation of single Fe impurities in GaAs by STM
J. Bocquel, V. R. Kortan, R. P. Campion +3
The incorporation of Fe in GaAs was studied by cross-sectional scanning tunneling microscopy (X-STM). The observed local electronic contrast of a single Fe atom is found to depend…