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cond-mat.mtrl-sci2026

Energy and Scaling Limits of Phase-Change Memory

Rivka-Galya Nir-Harwood, Asir I. Khan, Emanuel Ber +6

Phase change memory (PCM) relies on a reversible transition between amorphous and crystalline states of a material, and stands as a promising candidate for next-generation, energy-…

cond-mat.mtrl-sci2025

Scale-robust Low Resistance Transport in Atomic Layer Deposited Topological Semimetal Wafers on Amorphous Substrate

Dong-Hyun Lim, Young-Min Song, Yeji Kim +8

As data-centric computing advances, energy-efficient interconnects are increasingly critical for AI-driven systems. Traditional metal conductors face severe limitations at nanoscal…

cond-mat.mtrl-sci2025

Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors

Asir Intisar Khan, Jeong-Kyu Kim, Urmita Sikder +5

For high-electron-mobility transistors based on two-dimensional electron gas (2DEG) within a quantum well, such as those based on AlGaN/GaN heterostructure, a Schottky-gate is used…

cond-mat.mtrl-sci2025

Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal

Asir Intisar Khan, Akash Ramdas, Emily Lindgren +9

The electrical resistivity of conventional metals, such as copper, is known to increase in thin films due to electron-surface scattering, limiting the performance of metals in nano…

cond-mat.mtrl-sci2024

Enabling P-type Conduction in Bilayer WS2 with NbP Topological Semimetal Contacts

Lauren Hoang, Asir Intisar Khan, Robert K. A. Bennett +7

Two-dimensional (2D) semiconductors are promising for low-power complementary metal oxide semiconductor (CMOS) electronics, which require ultrathin n- and p-type transistor channel…