activity
20152026
most citedIntrinsic origin of electron scattering at 4H-SiC(0001)/SiO

13 citations · 30 across the 6 of their papers we have counts for

collaborators
Showing 2016 · cond-mat.mtrl-sciShow all

1 paper · 2 filters

cond-mat.mtrl-sci2016★ 13 cited

Intrinsic origin of electron scattering at 4H-SiC(0001)/SiO

Shigeru Iwase, Christopher James Kirkham, Tomoya Ono

We introduce a first-principles study to clarify the carrier-scattering property at the SiC/SiO. Interestingly, the electron transport at the conduction-band edge is significan…