4 papers
Atomistic origin and strain control of the finite-temperature dielectric response in BaTiO3
Ryotaro Sahashi, Po-Yen Chen, Teruyasu Mizoguchi
The dielectric response of BaTiO3 (BTO) varies strongly with temperature, yet its local atomic origin remains unclear. Using electric-field-coupled molecular dynamics with a machin…
Transient Detour and Cooperative Oxygen Exchange in the Polarization Switching of Ferroelectric Hf0.5Zr0.5O2
Ryotaro Sahashi, Po-Yen Chen, Teruyasu Mizoguchi
Hafnium zirconium oxide (HZO) has attracted significant attention as a core material for next-generation non-volatile memories due to its excellent ferroelectricity in the ultra-th…
Origin of Reduced Coercive Field in ScAlN: Synergy of Structural Softening and Dynamic Atomic Correlations
Ryotaro Sahashi, Po-Yen Chen, Teruyasu Mizoguchi
Among wurtzite-type ferroelectrics, scandium-doped aluminum nitride (ScAlN) has emerged as a leading candidate for CMOS-compatible low-voltage memory, combining strong spontaneous…
Decoupling structural and bonding effects on ferroelectric switching in ScAlN via molecular dynamics under an applied electric field
Ryotaro Sahashi, Po-Yen Chen, Teruyasu Mizoguchi
ScxAl1-xN has emerged as a promising wurtzite-type ferroelectric material, where increasing the Sc composition reduces both the coercive field (Ec) and remanent polarization (Pr).…