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HoKwon Kim

3 papers hereh-index 143.7k citations26 works total

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  • first author1
  • middle author2

Across the 3 of 3 papers where every author was matched, so the position is known.

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  • cond-mat.mtrl-sci3

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most citedModeling of the self-limited growth in catalytic chemical vapor deposition of graphene

53 citations · 54 across the 3 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

3 papers · 1 filter

cond-mat.mtrl-sci2013★ 53 cited

Modeling of the self-limited growth in catalytic chemical vapor deposition of graphene

HoKwon Kim, Eduardo Saiz, Manish Chhowalla +1

The development of wafer-scale continuous single-crystal graphene layers is key in view of its prospective applications. To this end, here we pave the way for a graphene growth mod…

cond-mat.mtrl-sci2009

Highly Uniform 300 mm Wafer-Scale Deposition of Single and Multilayered Chemically Derived Graphene Thin Films

Hisato Yamaguchi, Goki Eda, Cecilia Mattevi +2

The deposition of atomically thin highly uniform chemically derived graphene (CDG) films on 300 mm SiO2/Si wafers is reported. We demonstrate that the very thin films can be lifted…

cond-mat.mtrl-sci2009★ 1 cited

Insulator to semi-metal transition in graphene oxide

Goki Eda, Cecilia Mattevi, Hisato Yamaguchi +2

Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semicondu…

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