Molecular Beam Epitaxy of 2H-TaS${}_2$ few-layers on GaN(0001)

Constantin Hilbrunner, Tobias Meyer, Joerg Malindretos +1

2H-TaS${}_2$ few layers have been grown epitaxially onto GaN(0001). A high substrate growth temperature of 825${}^{\circ }$C induces best structural properties of the overlayer, as reve…