2 papers
cond-mat.other2026
Revealing New Leakage Paths in GAAFETs using Predictive First-Principles Simulations
Denis Mamaluy, Juan P. Mendez, Coleman Cariker +2
Gate-All-Around Field-Effect Transistors (GAAFETs) are emerging as successors to Fin Field-Effect Transistors (FinFETs) and are central to continued scaling at advanced semiconduct…
cond-mat.other2026
Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors
Juan P. Mendez, Coleman Cariker, Michael Titze +2
Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and…