Ângelo Gabriel Teixeira da Costa

collaborators

3 papers

cond-mat.mtrl-sci2026

Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga $_{2}$ O $_{3}$ thin films

Inês Freitas, Ana Sofia Sousa, Duarte Magalhães Esteves +6

Gallium oxide (Ga $_{2}$ O $_{3}$ ) is a wide-bandgap semiconductor with exceptional electrical and optical properties, making it a promising material for optoelectronic and sensing applic…

cond-mat.mtrl-sci2026

Au and Ag nanoparticles produced by ion implantation in single-crystalline $β$ -Ga $_{2}$ O $_{3}$

Duarte Magalhães Esteves, Ana Sofia Sousa, Inês Freitas +5

This work reports the successful formation of Ag and Au nanoparticles in $β$ -Ga $_{2}$ O $_{3}$ single-crystals by ion implantation and annealing at 550 °C. X-ray diffraction measurements…

cond-mat.mtrl-sci2026

Understanding the anisotropic response of $β$ -Ga $_{2}$ O $_{3}$ to ion implantation

Duarte Magalhães Esteves, Ru He, Sérgio Magalhães +8

While $β$ -Ga $_{2}$ O $_{3}$ is considered a promising wide bandgap semiconductor, the impact of ion-induced defect formation and anisotropic elasticity remains poorly understood. Here, w…

Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga2​O3​ thin films

Au and Ag nanoparticles produced by ion implantation in single-crystalline β-Ga2​O3​

Understanding the anisotropic response of β-Ga2​O3​ to ion implantation

Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga $_{2}$ O $_{3}$ thin films

Au and Ag nanoparticles produced by ion implantation in single-crystalline $β$ -Ga $_{2}$ O $_{3}$

Understanding the anisotropic response of $β$ -Ga $_{2}$ O $_{3}$ to ion implantation