most citedValidation of constant mean free path and relaxation time approximations for metal resistivity: explicit treatment of electron-phonon interactions

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cond-mat.other2026★ 1 cited

Trap-Enhanced Steep-Slope Negative-Capacitance FETs Using Amorphous Oxide Semiconductors

Yungyeong Park, Hakseon Lee, Yeonghun Lee

Amorphous oxide semiconductors (AOSs) have recently gained attention as a promising channel material of back-end-of-line (BEOL)-compatible transistors for monolithic three-dimensio…