activity
20132026
most citedRoom-temperature antiferromagnetic memory resistor

707 citations · 809 across the 8 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2026★ 1 cited

Solid-state transcapacitor, a new gain element for logic, memory and interconnects

Amrita Mathuriya, Roza Kotlyar, Neal Reynolds +9

Today's transistors dictate the voltage and charge scales for both logic and memory. While AI systems are recognized to be limited by memory energy, the dominant share of the energ…

cond-mat.mtrl-sci2026

Revealing buried ferroelectric topologies by depth-resolved electron diffraction imaging

Ting-Ran Liu, Koushik Jagadish, Xiangwei Guo +10

Nanoscale topological polar textures promise new functionalities for ferroelectric memories and logic, yet their three-dimensional structure and mesoscale organization remain exper…

cond-mat.mtrl-sci2026

Spatially modulated morphotropic phase boundaries in a compressively strained multiferroic thin film

Ting-Ran Liu, Xiangwei Guo, Sajid Husain +5

The coexisting rhombohedral-like (R', MA) and tetragonal-like (T', MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and…

cond-mat.mtrl-sci2025

Improper Ferroelectricity at the Monolayer Limit

Yilin Evan Li, Harikrishnan KP, Haidong Lu +20

Ultrathin ferroelectric films with out-of-plane polarization and high Curie temperatures are key to miniaturizing electronic devices. Most ferroelectrics employed in devices are pr…

cond-mat.mtrl-sci2015

Single Crystal Functional Oxides on Silicon

Saidur Rahman Bakaul, Claudy Rayan Serrao, Michelle Lee +11

Single crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism etc. that have…

cond-mat.mtrl-sci2015★ 707 cited

Room-temperature antiferromagnetic memory resistor

X. Marti, I. Fina, C. Frontera +17

The bistability of ordered spin states in ferromagnets (FMs) provides the magnetic memory functionality. Traditionally, the macroscopic moment of ordered spins in FMs is utilized t…

cond-mat.str-el2014★ 65 cited

Induced magnetization in LaSrMnO/BiFeO superlattices

S. Singh, J. T. Haraldsen, J. Xiong +14

Using polarized neutron reflectometry (PNR), we observe an induced magnetization of 75 25 kA/m at 10 K in a LaSrMnO (LSMO)/BiFeO superlattice extending…

cond-mat.str-el2013★ 16 cited

Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, SrIrO

J. Ravichandran, C. R. Serrao, D. K. Efetov +5

Electric field effect (EFE) controlled magnetoelectric transport in thin films of undoped and La-doped SrIrO (SIO) were investigated under the action of ionic liquid ga…

cond-mat.mtrl-sci2013★ 20 cited

Symmetry-Tunable Environment in Functional Ferroic Heterostructures

C. Becher, M. Trassin, M. Lilienblum +7

We demonstrate a concept for post-growth symmetry control in oxide heterostructures. A functional oxide is sandwiched between two ferroelectric layers and inversion symmetry at the…