31 citations · 31 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2026
The completed High-Low method for interface state density analysis in MOS capacitors
Brian D. Rummel, Sarit Dhar, Robert J. Kaplar
Interface state densities, , in metal-oxide-semiconductor (MOS) capacitors are rarely reported in the accumulation energy range. It is recognized that the determination of…
cond-mat.mtrl-sci2015★ 31 cited
Atomic origin of high temperature electron trapping in MOS devices
Xiao Shen, Sarit Dhar, Sokrates T. Pantelides
MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can…