V. Stanishev

activity

20222026

most citedMg-doping and free-hole properties of hot-wall MOCVD GaN

29 citations · 29 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2026

Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics

D. Gogova, D. Tran, V. Stanishev +11

Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitri…

cond-mat.mtrl-sci2024

Effective uniaxial dielectric function tensor and optical phonons in ( $2 ˉ 01$ )-plane oriented $β$ -Ga $_{2}$ O $_{3}$ films with equally-distributed six-fold rotation domains

Alyssa Mock, Steffen Richter, Alexis Papamichail +11

Monoclinic $β$ -Ga $_{2}$ O $_{3}$ films grown on $c$ -plane sapphire have been shown to exhibit six $(2 ˉ 01)$ -plane oriented domains, which are equally-spaced-by-rotation around the su…

physics.app-ph2022★ 29 cited

Mg-doping and free-hole properties of hot-wall MOCVD GaN

Alexis Papamichail, Anelia Kakanakova, Einar O. Sveinbjörnsson +10

The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for M…

Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics

Effective uniaxial dielectric function tensor and optical phonons in (2ˉ01)-plane oriented β-Ga2​O3​ films with equally-distributed six-fold rotation domains

Mg-doping and free-hole properties of hot-wall MOCVD GaN

Effective uniaxial dielectric function tensor and optical phonons in ( $2 ˉ 01$ )-plane oriented $β$ -Ga $_{2}$ O $_{3}$ films with equally-distributed six-fold rotation domains