11 citations · 17 across the 9 of their papers we have counts for
9 papers
Highly Lattice-Mismatched Selective Area Epitaxy and Coalescence of PbSe Nanostructures on GaAs
Ashlee M. García, Hosni A. Kaissi, Jarod E. Meyer +9
Selective area growth of PbSe has the potential to realize deterministic placement of high-density, defect-tolerant nanostructure networks toward a scalable quantum platform. PbSe…
Nonresonant optomechanical control of structural phases
Jiaojian Shi, Yijing Huang, Christian Heide +24
Optical tweezers demonstrate how light can exert forces to trap, repel, and manipulate microscopic particles without absorption. Recent theory has suggested that such forces can ex…
Monolithic integration of optically anisotropic GeSe-based films on GaAs by templated solid-phase epitaxy
Kira J. Martin, Autumn Y. Lee, Pranav Mahaadev +6
Layered IV-VI semiconductors such as GeSe exhibit strong in-plane optical anisotropy, making them promising candidates for polarization-sensitive photonic devices. However, realizi…
Shining light on short-range atomic ordering in semiconductors alloys
Anis Attiaoui, Shunda Chen, Joseph C. Woicik +7
The functional properties of semiconductors are typically controlled by tailoring their chemical composition and their state of strain, and by controlling their long-range structur…
Epitaxial Growth of Anisotropic SnSe on GaAs(001) via Step-Edge Orientation Control
Pooja D. Reddy, Zahra N. Heussen, Kunal Mukherjee
Epitaxial growth of orthorhombic SnSe on cubic substrates is challenging due to lattice-symmetry mismatch and anisotropic bonding. Here we demonstrate that epitaxial films with sha…
Mid-infrared LEDs based on lattice-mismatched hybrid IV-VI/III-V heterojunctions
Jarod E. Meyer, Biridiana Rodriguez, Leland Nordin +1
Light-emitting diodes (LEDs) can bridge the gap between narrow linewidth, expensive lasers and broadband, inefficient thermal globars for low-cost chemical sensing in the mid-infra…
Heteroepitaxial growth of highly anisotropic films on GaAs
Kelly Xiao, Virat Tara, Pooja D. Reddy +6
The epitaxial integration of anisotropic materials with mainstream cubic semiconductors opens new routes to advanced electronic and photonic devices with directional properties. In…
Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared
Kelly Xiao, Bryce Wong, Jarod Meyer +2
PbSe is a narrow bandgap IV-VI compound semiconductor with application in mid-wave infrared optoelectronics, thermoelectrics, and quantum devices. Alkaline earth or rare earth elem…
Expanded stability of layered SnSe-PbSe alloys and evidence of displacive phase transformation from rocksalt in heteroepitaxial thin films
Pooja D. Reddy, Leland Nordin, Lillian Hughes +2
Bulk PbSnSe has a two-phase region or miscibility gap as the crystal changes from a Van der Waals-bonded orthorhombic 2D layered structure in SnSe-rich compositions to the related…