Optimal spin-qubit hallmarks of sulfur-vacancy defects in 4H-SiC: Design from first principles

Marisol Alcántara Ortigoza, Sergey Stolbov

By applying our methodology, we propose a defect in 4H-SiC which combines a Si vacancy and a C atom substituted with S (VSiSC) to have a spin-triplet ground state with the spin qub…