2 citations · 2 across the 2 of their papers we have counts for
2 papers
quant-ph2026
Strain-induced modification of spin-optical dynamics in silicon vacancy centers for integrated quantum technologies
Maximilian Hollendonner, Fedor Dzmitryevich Hrunski, Daniel Scheller +8
Silicon vacancy (VSi) centers in 4H silicon carbide have emerged as a highly promising platform for semiconductor-based quantum technologies, combining excellent spin and optical p…
physics.app-ph2024★ 2 cited
On the experimental properties of the TS defect in 4H-SiC
Johannes A. F. Lehmeyer, Alexander D. Fuchs, Zhengming Li +9
When annealing a 4H silicon carbide (SiC) crystal, a sequence of optically active defect centers occurs among which the TS center is a prominent example. Here, we present low-tempe…