6 papers
Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
Noah Zahn, Julia L. Martin, Michelle A. Smeaton +3
Tantalum carbide (TaC) thin film ''virtual'' substrates are a highly desirable material for vertical power electronics devices due to latti…
Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics
MVS Chandrashekhar, Daniel Joel Harrison, Ahamed Raihan +22
We report the properties of hexagonal (space group P6/mmm) scandium diboride () single crystals grown by a laser diode floating zone method at growth rates of ~1mm/…
Revealing epitaxial relationships at GaO interfaces with p-type oxides
Anna Sacchi, Krishna Acharya, Michelle A. Smeaton +5
p-type oxide contact layers such as CrO and NiO are attracting increasing interest in pn-heterojunctions with n-type monoclinic -GaO for high-power electronic de…
Low resistance NiO/β-Ga_{2}O_{3} heterojunction diodes grown via molecular beam epitaxy
Dagny Sacksteder, Anna Sacchi, Renae Gannon +4
NiO is one of the most important p-type oxide contact materials used in many semiconductor technologies. However, current NiO growth methods can induce interfacial damage that dimi…
Revealing the Atomic Structure of NiO/GaO Interfaces
Michelle A. Smeaton, Krishna Acharya, Anna Sacchi +5
NiO/GaO heterojunctions have garnered significant attention for use in power electronics due to the ultrawide bandgap and wafer-scale availability of GaO an…
Born-Qualified: An Autonomous Framework for Deploying Advanced Energy and Electronic Materials
Steven R. Spurgeon, Milad Abolhasani, Frederick Baddour +28
Autonomous science is transforming how we discover materials and chemical systems for advanced energy technologies. However, many initially promising systems never reach deployment…