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cond-mat.mes-hall2026
Engineering Quantum Criticality in the Integer Quantum Hall Regime through a Screening Layer
C. T. Tai, P. T. Madathil, A. Gupta +3
Disorder-induced localization of electrons and electron-electron interaction are among the most fundamental problems in condensed matter physics. In two-dimensional electron system…
cond-mat.mes-hall2026
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm^2/(Vs)
T. J. Martz-Oberlander, B. Bulgaru, Z. Berkson-Korenberg +6
We report the fabrication and operation of a source-drain-gate three-terminal field-effect electronic device with an electron mobility exceeding cm / (Vs). Seve…