From the 1 of 17 linked papers with an AI index.
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17 papers
Atomistic understanding of two-dimensional monatomic phase-change material for non-volatile optical applications
Hanyi Zhang, Xueqi Xing, Jiang-Jing Wang +8
Elemental antimony (Sb) is a promising material for phase-change memory, neuromorphic computing and nanophotonic applications, because its compositional simplicity can prevent phas…
Spin glass behavior in amorphous CrSiTe3 alloy
Xiaozhe Wang, Jiayue Wang, Yihui Jiang +4
Owing to the intrinsically high crystallization temperatures, layered phase-change materials, such as CrGeTe3 and InGeTe3, are attracting attention for embedded memory applications…
Ab initio investigation of layered TMGeTe3 alloys for phase-change applications
Yihui Jiang, Suyang Sun, Hanyi Zhang +4
Chalcogenide phase-change materials (PCMs) are one of the most mature candidates for next-generation memory technology. Recently, CrGeTe3 (CrGT) emerged as a promising PCM due to i…
Multiscale simulations of growth-dominated SbTe phase-change material for non-volatile photonic applications
Xu-Dong Wang, Wen Zhou, Hangming Zhang +5
Chalcogenide phase-change materials (PCMs) are widely applied in electronic and photonic applications, such as non-volatile memory and neuro-inspired computing. Doped SbTe allo…
Spin glass behavior in amorphous Cr2Ge2Te6 phase-change alloy
Xiaozhe Wang, Suyang Sun, Jiang-Jing Wang +8
The layered crystal structure of Cr2Ge2Te6 shows ferromagnetic ordering at the two-dimensional limit, which holds promise for spintronic applications. However, external voltage pul…
In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys
Ting-Ting Jiang, Xu-Dong Wang, Jiang-Jing Wang +7
Tailoring the degree of structural disorder in Ge-Sb-Te alloys is important for the development of non-volatile phase-change memory and neuro-inspired computing. Upon crystallizati…