activity
19962022
most citedMeasurement of the Optical Conductivity of Graphene

1.7k citations · 1.9k across the 6 of their papers we have counts for

collaborators

6 papers

quant-ph2022★ 21 cited

Architectures for Multinode Superconducting Quantum Computers

James Ang, Gabriella Carini, Yanzhu Chen +30

Many proposals to scale quantum technology rely on modular or distributed designs where individual quantum processors, called nodes, are linked together to form one large multinode…

cond-mat.str-el2014★ 10 cited

Predicting Excitonic Gaps of Semiconducting Single Walled Carbon Nanotubes From a Field Theoretic Analysis

Robert M. Konik, Matthew Y. Sfeir, James A. Misewich

We demonstrate that a non-perturbative framework for the treatment of the excitations of single walled carbon nanotubes based upon a field theoretic reduction is able to accurately…

cond-mat.mes-hall2009★ 5 cited

The Electronic Structure of Few-Layer Graphene: Probing the Evolution from a 2-Dimensional to a 3-Dimensional Material

Kin Fai Mak, Matthew Y. Sfeir, James A. Misewich +1

While preserving many of the unusual features of single-layer graphene, few-layer graphene (FLG) provides a richness and flexibility of electronic structure that render this set of…

cond-mat.mtrl-sci2008★ 1.7k cited

Measurement of the Optical Conductivity of Graphene

Kin Fai Mak, Matthew Y. Sfeir, Yang Wu +3

Optical reflectivity and transmission measurements over photon energies between 0.2 and 1.2 eV were performed on single-crystal graphene samples on a transparent SiO2 substrate. Fo…

cond-mat.other2006

Effect of Number of Walls on Plasmon Behavior in Carbon Nanotubes

M. H. Upton, R. F. Klie, J. P. Hill +8

We investigate the physical parameters controlling the low energy screening in carbon nanotubes via electron energy loss spectroscopy and inelastic x-ray scattering. Two plasmon-li…

cond-mat1996★ 100 cited

A Field Effect Transitor based on the Mott Transition in a Molecular Layer

C. Zhou, D. M. Newns, J. A. Misewich +1

Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator tra…