96 citations · 132 across the 4 of their papers we have counts for
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cond-mat.mes-hall2009★ 7 cited
Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor
E. T. Croke, M. G. Borselli, M. F. Gyure +5
We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the dop…
cond-mat.mes-hall2009★ 17 cited
Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
Robert R. Hayes, Andrey A. Kiselev, Matthew G. Borselli +10
We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Us…