38 citations · 62 across the 3 of their papers we have counts for
3 papers
Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
Wei Yi, Andrey A. Kiselev, Jacob Thorp +13
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of…
Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor
E. T. Croke, M. G. Borselli, M. F. Gyure +5
We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the dop…
Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
Robert R. Hayes, Andrey A. Kiselev, Matthew G. Borselli +10
We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Us…