121 citations · 473 across the 13 of their papers we have counts for
10 papers · 1 filter
Self-assembling of Ge quantum dots in an alumina matrix
M. Buljan, S. R. C. Pinto, A. G. Rolo +6
In this work we report on a self-assembled growth of a Ge quantum dot lattice in a single 600-nm-thick Ge+Al2O3 layer during magnetron sputtering deposition of a Ge+Al2O3 mixture a…
Low damping and microstructural perfection of sub-40nm-thin yttrium iron garnet films grown by liquid phase epitaxy
Carsten Dubs, Oleksii Surzhenko, Ronny Thomas +6
The field of magnon spintronics is experiencing an increasing interest in the development of solutions for spin-wave-based data transport and processing technologies that are compl…
Magneto-structural correlations in a systematically disordered B2 lattice
Jonathan Ehrler, Biplab Sanyal, Jörg Grenzer +9
Ferromagnetism in certain B2 ordered alloys such as FeAl can be switched on, and tuned, via antisite disordering of the atomic arrangement. The disordering is accompa…
Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Slawomir Prucnal, Yonder Berencén, Mao Wang +19
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate…
Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing
Yufang Xie, Ye Yuan, Mao Wang +7
Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) su…
Up to 40 % reduction of the GaAs band gap energy via strain engineering in core/shell nanowires
L. Balaghi, G. Bussone, R. Grifone +7
The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without ch…