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Thickness dependence of antiferromagnetic phase transition in Heisenberg-type MnPS3
Soo Yeon Lim, Kangwon Kim, Sungmin Lee +2
The behavior of 2-dimensional (2D) van der Waals (vdW) layered magnetic materials in the 2D limit of the few-layer thickness is an important fundamental issue for the understanding…
Polytypism in Few-Layer Gallium Selenide
Soo Yeon Lim, Jae-Ung Lee, Jung Hwa Kim +6
Gallium selenide (GaSe) is one of layered group-III metal monochalcogenides, which has an indirect bandgap in monolayer and direct bandgap in bulk unlike other conventional transit…
Optical phonons of SnSe(1-x)Sx layered semiconductor alloys
Tharith Sriv, Thi Minh Hai Nguyen, Yangjin Lee +5
The evolution of the optical phonons in layered semiconductor alloys SnSe1-xSx is studied as a function of the composition by using polarized Raman spectroscopy with six different…
Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe
B. K. Choi, S. Ulstrup, S. M. Gunasekera +12
Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H se…
Band Gap Estimation of Multilayer 2D Semiconductor Channels Using Thin Graphite Contact
Sam Park, June Yeong Lim, Sanghyuck Yu +4
Band gap of monolayer and few layers in two dimensional (2D) semiconductors has usually been measured by optical probing such as photoluminescence (PL). However, if their exfoliate…