236 citations · 2k across the 32 of their papers we have counts for
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Universal electric-field-driven resistive transition in narrow-gap Mott insulators
Pablo Stoliar, Laurent Cario, Etienne Janod +6
One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the re…
Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories
Laurent Cario, Cristian Vaju, Benoit Corraze +2
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical res…
Resistive switching induced by electronic avalanche breakdown in GaTaSeTe narrow gap Mott Insulators
Vincent Guiot, Laurent Cario, Etienne Janod +6
Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators,…
In-plane magnetic penetration depth in NbS
Pascale Diener, Maxime Leroux, Laurent Cario +2
We report on the temperature dependence of the in plane magnetic penetration depth () and first penetration field ( for ) in 2H-NbS sing…