3 papers
cs.ET2026
DTCO of NOR-Type IGZO FeFETs for 3D Heterogeneous AI Memories: A Read-Centric Perspective
Yang Xiang, Zhuo Chen, Nicolò Ronchi +8
InGaZnO (IGZO)-channel FeFETs have attracted notable interest thanks to recent advances in endurance, opening up their application space for read-dominated AI memory tiers. This wo…
cond-mat.mtrl-sci2026
Revealing the Partially Coherent Nature of Transport in IGZO
Ying Zhao, Michiel J. van Setten, Anastasiia Kruv +10
Thin-film transistors based on amorphous oxide semiconductors (AOS) are promising candidates for enabling further DRAM scaling and 3D integration, which are critical for advanced c…
cond-mat.mtrl-sci2025
In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI
A. Kruv, M. J. van Setten, A. Chasin +12
Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 4…