5 papers
DTCO of NOR-Type IGZO FeFETs for 3D Heterogeneous AI Memories: A Read-Centric Perspective
Yang Xiang, Zhuo Chen, Nicolò Ronchi +8
InGaZnO (IGZO)-channel FeFETs have attracted notable interest thanks to recent advances in endurance, opening up their application space for read-dominated AI memory tiers. This wo…
Revealing the Partially Coherent Nature of Transport in IGZO
Ying Zhao, Michiel J. van Setten, Anastasiia Kruv +10
Thin-film transistors based on amorphous oxide semiconductors (AOS) are promising candidates for enabling further DRAM scaling and 3D integration, which are critical for advanced c…
Subthreshold Swing Behavior in Amorphous Indium-Gallium-Zinc-Oxide Transistors from Room to Cryogenic Temperatures
Hongwei Tang, Attilio Belmonte, Dennis Lin +10
While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semico…
Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation
K. Vishwakarma, K. Lee, A. Kruv +8
This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demon…
The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT
Hongwei Tang, Dennis Lin, Subhali Subhechha +14
While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a…