5 papers
DTCO of NOR-Type IGZO FeFETs for 3D Heterogeneous AI Memories: A Read-Centric Perspective
Yang Xiang, Zhuo Chen, Nicolò Ronchi +8
InGaZnO (IGZO)-channel FeFETs have attracted notable interest thanks to recent advances in endurance, opening up their application space for read-dominated AI memory tiers. This wo…
SOT-MRAM Bitcell Scaling with BEOL Read Selectors: A DTCO Study
Yang Xiang, Fernando GarcÃa-Redondo, Arvind Sharma +9
This work explores the cross-node scaling potential of SOT-MRAM for last-level caches (LLCs) under heterogeneous system scaling paradigm. We perform extensive Design-Technology Co-…
Subthreshold Swing Behavior in Amorphous Indium-Gallium-Zinc-Oxide Transistors from Room to Cryogenic Temperatures
Hongwei Tang, Attilio Belmonte, Dennis Lin +10
While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semico…
The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT
Hongwei Tang, Dennis Lin, Subhali Subhechha +14
While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a…
In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI
A. Kruv, M. J. van Setten, A. Chasin +12
Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 4…