Catalytic precursor dissociation in Hot-Wire CVD and comparing a-Si:H growth under continuous and pulsed silane flow conditions

Swati Goyal, Karam Veer Singh, Rajiv O. Dusane +1

Hot-wire Chemical vapor deposition (HWCVD) of hydrogenated amorphous silicon (a-Si:H) thin films utilizes the dissociation of silane (SiH4) precursor over heated tungsten or tantal…