2 papers
cond-mat.mtrl-sci2026
Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials
Ashlee M. GarcÃa, Byron D. Aguilar, William J. Doyle +4
Selective-area embedded regrowth of III-V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel de…
physics.optics2026
A scalable platform for nanometer-scale quantum confinement
Christina M. Spaegele, Mehdi Rezaee, Thomas Werkmeister +8
Overcoming the limitations of current nanofabrication techniques to achieve nanoscale feature sizes is essential for achieving new regimes of light-matter interactions at extreme f…