4 papers
AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2
Seungheon Shin, Jonathan Pratt, Joe McGlone +5
We report the demonstration of regrown epitaxial AlN gate interlayers with ultra-wide bandgap (UWBG) AlGaN polarization-graded field effect transistors (PolFETs). The introduction…
High Breakdown Field Multi-kV UWBG AlGaN Transistors
Seungheon Shin, Kyle Liddy, Jon Pratt +6
We demonstrate high-performance UWBG AlGaN PolFETs exhibiting a state-of-the-art combination of nearly 1 A/mm on-state current (~ 960 mA/mm) and large breakdown field (> 4.8 MV/cm)…
Electrostatic Effects of Self Trapped Holes in Gallium Oxide Devices
Nathan Wriedt, Joe McGlone, Davide Orlandini +1
Gallium oxide is an ultra-wide bandgap semiconductor with exceptional properties for power electronics and UV-C optoelectronics, but its behavior under illumination remains poorly…
Extremely Low Thermal Resistance Architectures for AlxGaN1-x Semiconductor Devices
Kidus Guye, Davide Orlandini, Seungheon Shin +4
Next-generation high-power radio-frequency (RF) devices increasingly demand transistors that operate efficiently with high gain at high frequencies. High-aluminum-content ultra-wid…