4 papers · 1 filter
AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2
Seungheon Shin, Jonathan Pratt, Joe McGlone +5
We report the demonstration of regrown epitaxial AlN gate interlayers with ultra-wide bandgap (UWBG) AlGaN polarization-graded field effect transistors (PolFETs). The introduction…
High Breakdown Field Multi-kV UWBG AlGaN Transistors
Seungheon Shin, Kyle Liddy, Jon Pratt +6
We demonstrate high-performance UWBG AlGaN PolFETs exhibiting a state-of-the-art combination of nearly 1 A/mm on-state current (~ 960 mA/mm) and large breakdown field (> 4.8 MV/cm)…
Scaled Ultra-Wide Bandgap AlGaN Polarization-Graded FET with Ultra-thin Buffer Layer
Yinxuan Zhu, Ashley Wissel-Garcia, Kidus Guye +12
We report on the design and demonstration of ultra-wide bandgap AlGaN polarization-graded field effect transistors with ultra-thin channels to enable excellent current density and…
Ultra-Wide Bandgap AlGaN Heterostructure Field Effect Transistors with Current Gain Cutoff Frequency Above 85 GHz
Yinxuan Zhu, Andrew A. Allerman, Ashley Wissel-Garcia +8
We report the design and demonstration of ultra-wide-bandgap (UWBG) AlGaN polarization-graded field-effect transistors (PolFETs) that achieve a current-gain cutoff frequency above…