P. Bodewei

most citedComputational design of NDR tunnel diodes with high peak-to-valley current ratio based on two-dimensional cold metals: The case of NbSi

_{2}

_{4}

/HfSi

_{2}

_{4}

/NbSi

_{2}

_{4}

lateral heterojunction diode

9 citations · 17 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2024★ 8 cited

Multifunctional steep-slope spintronic transistors with spin-gapless-semiconductor or spin-gapped-metal electrodes

Ersoy Şaşıoğlu, Paul Bodewei, Nicki F. Hinsche +1

Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel…

cond-mat.mtrl-sci2023★ 9 cited

Computational design of NDR tunnel diodes with high peak-to-valley current ratio based on two-dimensional cold metals: The case of NbSi $_{2}$ N $_{4}$ /HfSi $_{2}$ N $_{4}$ /NbSi $_{2}$ N $_{4}$ lateral heterojunction diode

P. Bodewei, E. Şaşıoğlu, N. F. Hinsche +1

Cold metals have recently gained attention as a promising platform for innovative devices, such as tunnel diodes with negative differential resistance (NDR) and field-effect transi…

Multifunctional steep-slope spintronic transistors with spin-gapless-semiconductor or spin-gapped-metal electrodes

Computational design of NDR tunnel diodes with high peak-to-valley current ratio based on two-dimensional cold metals: The case of NbSi2​N4​/HfSi2​N4​/NbSi2​N4​ lateral heterojunction diode

Computational design of NDR tunnel diodes with high peak-to-valley current ratio based on two-dimensional cold metals: The case of NbSi $_{2}$ N $_{4}$ /HfSi $_{2}$ N $_{4}$ /NbSi $_{2}$ N $_{4}$ lateral heterojunction diode