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physics.app-ph2023
SOT-MRAM-Enabled Probabilistic Binary Neural Networks for Noise-Tolerant and Fast Training
Puyang Huang, Yu Gu, Chenyi Fu +10
We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications…
eess.SP2023
A Read Margin Enhancement Circuit with Dynamic Bias Optimization for MRAM
Renhe Chen, Albert Lee, Zirui Wang +2
This brief introduces a read bias circuit to improve readout yield of magnetic random access memories (MRAMs). A dynamic bias optimization (DBO) circuit is proposed to enable the r…