7 citations · 15 across the 5 of their papers we have counts for
5 papers
OPTIMA: Design-Space Exploration of Discharge-Based In-SRAM Computing: Quantifying Energy-Accuracy Trade-Offs
Saeed Seyedfaraji, Severin Jager, Salar Shakibhamedan +2
In-SRAM computing promises energy efficiency, but circuit nonlinearities and PVT variations pose major challenges in designing robust accelerators. To address this, we introduce OP…
HOPE: Holistic STT-RAM Architecture Exploration Framework for Future Cross-Platform Analysis
Saeed SeyedFaraji, Markus Bichl, Asad Aftab +1
Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-b…
EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit
Saeed Seyedfaraji, Javad Talafy Daryani, Mohamed M. Sabry Aly +1
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic p…
SMART: Investigating the Impact of Threshold Voltage Suppression in an In-SRAM Multiplication/Accumulation Accelerator for Accuracy Improvement in 65 nm CMOS Technology
Saeed Seyedfaraji, Baset Mesgari, Semeen Rehman
State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems.…
AID: Accuracy Improvement of Analog Discharge-Based in-SRAM Multiplication Accelerator
Saeed Seyedfaraji, Baset Mesgari, Semeen Rehman
This paper presents a novel circuit (AID) to improve the accuracy of an energy-efficient in-memory multiplier using a standard 6T-SRAM. The state-of-the-art discharge-based in-SRAM…