2 papers
physics.optics2024
Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon
Vera V. Lendyashova, Igor V. Ilkiv, Vadim G. Talalaev +3
The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a silicon matrix has been…
physics.app-ph2024
Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices
Vera Lendyashova, Igor Ilkiv, Bogdan Borodin +4
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a s…