2 papers
physics.app-ph2024
Design and Process Analysis of a Split-Gate Trench Power MOSFET with Bottom-Trench Hk-Pillar Superjunction for Enhanced Performance
Yunteng Jiang, Zhentao Xiao, Zonghao Zhang +6
In this paper, we propose a simulation-based novel Split-Gate Trench MOSFET structure with an optimized fabrication process to enhance power efficiency, switching speed, and therma…
physics.app-ph2024
TCAD Simulation of Novel Multi-Spacer HK/MG 28nm Planar MOSFET for Sub-threshold Swing and DIBL Optimization
Zhentao Xiao, Yihao Zheng, Zonghao Zhang +6
This study optimizes 28 nm planar MOSFET technology to reduce device leakage current and enhance switching speed. The specific aims are to decrease subthreshold swing (S.S.) and mi…