7 citations · 10 across the 3 of their papers we have counts for
4 papers · 1 filter
Physical Basis for Band Transport and Dimensionality in Amorphous Oxide Semiconductor Field-Effect Transistors
Ananth Dodabalapur, Chankeun Yoon, Xiao Wang
A consistent and widely accepted physical basis for interpretation of charge transport in amorphous oxide semiconductor (AOS) field-effect transistors (FETs), and more generally de…
Velocity-field characteristics and device performance in nanoscale amorphous oxide Thin-Film-Transistors
Chankeun Yoon, Xiao Wang, Jatin Vikram Singh +2
The electron velocity-electric field characteristics in short channel length (50-100 nm) amorphous oxide field-effect transistors (FETs) are described using measured experimental d…
Enhancing Gate Control and Mitigating Short Channel Effects in 20-50 nm Channel Length Amorphous Oxide Thin Film Transistors
Chankeun Yoon, Juhan Ahn, Yuchen Zhou +2
Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of su…
Probing Charge Dynamics in Amorphous Oxide Semiconductors by Time-of-flight Microwave Impedance Microscopy
Jia Yu, Yuchen Zhou, Xiao Wang +3
The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional s…