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Yong-Hoon Kim

4 papers hereh-index 351 citations11 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • last author3

Across the 4 of 4 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall2
  • cond-mat.mtrl-sci1
  • physics.comp-ph1

identity via Semantic Scholar / OpenAlex

most citedAb initio calculation of the nonequilibrium adsorption energy

4 citations · 6 across the 3 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2026

Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors

Tae Hyung Kim, Juho Lee, Yong-Hoon Kim

As semiconductor devices approach the sub-2 nm technology node, identifying the quantum-mechanical limits of contact-resistance scaling becomes imperative; however, the transition…

cond-mat.mes-hall2024★ 2 cited

A New Direction for First-Principles Device Simulations

Yong-Hoon Kim, Ryong-Gyu Lee

The continued miniaturization of semiconductor devices, represented by Moore's law, has reached the atomic scale limit, requiring nanoscale quantum mechanical effects to be include…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.