activity
20232026
most citedAnomalous Spectroscopical Effects in an Antiferromagnetic Semiconductor

4 citations · 4 across the 4 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2026

Tuning Dirac-Rashba and Double Dirac Cone Surface States of Topological Crystalline Insulator PbSnSe by Transition Metal Adsorbate

Bartłomiej Turowski, Wojciech Brzezicki, Ondřej Caha +9

The electronic structure of topological insulator/magnetic metal (TI/MM) interfaces is of great importance for understanding of exotic spin-dependent phenomena and realization of a…

cond-mat.mtrl-sci2026

Magnetically tunable symmetry-enforced nodal lines producing huge anomalous Hall conductivity in altermagnetic -MnTe

Mathews Benny, Xujia Gong, Amar Fakhredine +17

Altermagnetic -MnTe exhibits huge anomalous Hall conductivity (AHC) up to room-temperature together with weak ferromagnetism arising from spin and orbital polarizations. We clar…

cond-mat.mtrl-sci20244 cited

Anomalous Spectroscopical Effects in an Antiferromagnetic Semiconductor

Michal Hubert, Tomáš Maleček, Kyo-Hoon Ahn +6

Following the recent observation of anomalous Hall effect in antiferromagnetic hexagonal MnTe thin films, related phenomena at finite frequencies have come into focus. Magnetic cir…

cond-mat.mtrl-sci2024

Anisotropic magnetoresistance in altermagnetic MnTe

Ruben Dario Gonzalez Betancourt, Jan Zubáč, Kevin Geishendorf +12

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In add…

cond-mat.mtrl-sci2024

Temperature Dependence of Relativistic Valence Band Splitting Induced by an Altermagnetic Phase Transition

M. Hajlaoui, S. W. D'Souza, L. Šmejkal +13

Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of…

cond-mat.mtrl-sci2023

A Novel Ferroelectric Rashba Semiconductor

Gauthier Krizman, Tetiana Zakusylo, Lakshmi Sajeev +8

Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injec…