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F. J. Alonso

3 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author3

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall1
  • math.ST1
  • physics.app-ph1
same name
  • F. J. Alonso — 2 papers
  • F. J. Alonso — 1 paper

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedVariability in Resistive Memories

194 citations · 207 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mes-hall2024★ 12 cited

Modeling the variability of memristive devices with hexagonal boron nitride as dielectric

Juan B. Roldan, David Maldonado, C. Aguilera-Pedregosa +6

Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cyc…

physics.app-ph2024★ 194 cited

Variability in Resistive Memories

Juan B. Roldán, Enrique Miranda, David Maldonado +17

Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, ha…

math.ST2024★ 1 cited

Different PCA approaches for vector functional time series with applications to resistive switching processes

C. Acal, A. M. Aguilera, F. J. Alonso +2

This paper is motivated by modeling the cycle-to-cycle variability associated with the resistive switching operation behind memristors. As the data are by nature curves, functional…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.