Crack-free Sc${}_x$Al${}_{1-x}$N(000$\bar{1}$) layers grown on Si(111) by plasma-assisted molecular beam epitaxy

Duc V. Dinh, Zhuohui Chen, Oliver Brandt

We investigate the synthesis of 340-nm-thick Sc${}_x$Al${}_{1-x}$N layers with $0\le x\le 0.35$ on AlN-buffered Si(111) by plasma-assisted molecular beam epitaxy. We employ an AlN…