most citedHigh Photoluminescence Intensity of Heterostructure AlGaN-based DUV-LED through Uniform Carrier Distribution

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physics.app-ph2022★ 1 cited

High Photoluminescence Intensity of Heterostructure AlGaN-based DUV-LED through Uniform Carrier Distribution

Mohammad Amirul Hairol Aman, Faris Azim Ahmad Fajri, Ahmad Fakhrurrazi Ahmad Noorden +3

We report a numerical analysis of the variation of Aluminium (Al) composition in Al Gallium Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode (DUV-LED) and its effects on…