2 papers
physics.app-ph2026
High Performance 4H-SiC Optically Controlled MOS Transistor
Sitian Chen, Ziqian Tian, Guoliang Zhang +7
This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent…
physics.app-ph2024
A Light-Emitting-Diodes-Integrated Silicon Carbide Insulated Gate Bipolar Transistor
Guoliang Zhang, Zhanwei Shen, Yujian Chen +3
A light-emitting-diodes (LEDs)-integrated silicon carbide (SiC) insulated gate bipolar transistors (LI-IGBT) is proposed in this paper. The novelty of the LI-IGBT depends on the ph…