5 citations · 5 across the 3 of their papers we have counts for
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A 20-kV Optical-Injection-Enhanced 4H-SiC Reverse-Conducting IGBT With Snapback-Free Operation and Low On-State Voltage
Yujian Chen, Guoliang Zhang, Ruijun Zhang +4
This letter proposes a 20-kV 4H-SiC optical-injection-enhanced reverse-conducting IGBT (OIE-RC-IGBT) with snapback-free operation and low on-state voltage. Light-emitting diodes (L…
High Performance 4H-SiC Optically Controlled MOS Transistor
Sitian Chen, Ziqian Tian, Guoliang Zhang +7
This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent…
A Light-Emitting-Diodes-Integrated Silicon Carbide Insulated Gate Bipolar Transistor
Guoliang Zhang, Zhanwei Shen, Yujian Chen +3
A light-emitting-diodes (LEDs)-integrated silicon carbide (SiC) insulated gate bipolar transistors (LI-IGBT) is proposed in this paper. The novelty of the LI-IGBT depends on the ph…