9 citations · 25 across the 4 of their papers we have counts for
4 papers
Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv +7
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy () in 4H-SiC, are leading candidates for scalable quantum technolog…
Theory of the divacancy in 4H-SiC: Impact of Jahn-Teller effect on optical properties
Vytautas Žalandauskas, Rokas Silkinis, Lasse Vines +2
Understanding the optical properties of color centers in silicon carbide is essential for their use in quantum technologies, such as single-photon emission and spin-based qubits. I…
Optical lineshapes of the C-center in silicon from ab initio calculations: Interplay of localized modes and bulk phonons
Rokas Silkinis, Marek Maciaszek, Vytautas Žalandauskas +4
In this work, we present a first-principles density functional theory (DFT) computational investigation of the luminescence and absorption lineshapes associated with the neutral ca…
Optical lineshapes for orbital singlet to doublet transitions in a dynamical Jahn-Teller system: the NiV center in diamond
Rokas Silkinis, Vytautas Žalandauskas, Gergő Thiering +4
We apply density functional theory to investigate interactions between electronic and vibrational states in crystal defects with multi-mode dynamical Jahn-Teller (JT) systems. Our…